Al-Doping Effect on the Surface Morphology of ZnO Films Grown by Reactive RF Magnetron Sputtering

Impact of the particles impingement on the electronic conductivity of Al doped ZnO films grown by reactive magnetron sputtering

Aluminium doped zinc oxide thin films (4 at.% Al) were deposited by reactive magnetron sputtering technique and characterized by X-ray diffraction (XRD), Rutherford backscattering spectroscopy (RBS), four point probe technique and optical spectrophotometry. High heterogeneities were observed as a function of sample position in the chamber. The chemical analyses did not reveal significant change...

Nanocrystalline GaN and GaN:H Films Grown by RF-Magnetron Sputtering

The structural and optical properties of nanocrystalline GaN and GaN:H films grown by RF-magnetron sputtering are focused here. The films were grown using a Ga target and a variety of deposition parameters (N2/H2/Arflow rates, RF power, and substrate temperatures). Si (100) and fused silica substrates were used at relatively low temperatures (Ts ≤ 420K). The main effects resulting from the depo...

Surface Properties of Nanostructured, Porous ZnO Thin Films Prepared by Direct Current Reactive Magnetron Sputtering

In this paper, the results of detailed X-ray photoelectron spectroscopy (XPS) studies combined with atomic force microscopy (AFM) investigation concerning the local surface chemistry and morphology of nanostructured ZnO thin films are presented. They have been deposited by direct current (DC) reactive magnetron sputtering under variable absolute Ar/O₂ flows (in sccm): 3:0.3; 8:0.8; 10:1; 15:1.5...

Structural properties of Cu2O epitaxial films grown on c-axis single crystal ZnO by magnetron sputtering

Eu-doped GaN films grown on sapphire and GaAs substrates by RF magnetron sputtering

The growth of Eu-doped GaN (GaN:Eu) films has been performed on GaAs (100) substrates using RF magnetron sputtering method. The GaN layers exhibit a wurtzite structure. Substrate temperature and the pressure during the deposition do not influence the orientation of GaN:Eu films. After annealing of GaN films in NH3, a strong red luminescence at 622 nm due to Eu ions has been observed.